Title :
Structure-dependent noise characteristics of transverse mode stabilised AlGaInP laser diodes
Author :
Hatakoshi, G. ; Ishikawa, Masatoshi ; Watanabe, Yoshihiro ; Uematsu, Yutaka
Author_Institution :
Toshiba Corp., Kawasaki, Japan
Abstract :
The oscillation spectra and noise characteristics of AlGaInP lasers are shown to depend on the ridge structure. Relatively narrow current injection width and wide optical field are realised in a
Keywords :
III-V semiconductors; aluminium compounds; electron device noise; gallium arsenide; gallium compounds; laser modes; optical waveguides; semiconductor junction lasers; stability; III-V semiconductors; low noise characteristics; narrow current injection width; oscillation spectra; ridge structure; self-pulsation; semiconductor lasers; stabilised AlGaInP laser diodes; structure dependent noise characteristics; transverse mode; visible light type; wide optical field;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890092
