DocumentCode :
795576
Title :
Fully self-aligned microwave InP/GaInAs single heterojunction bipolar transistors
Author :
Schumacher, L. ; Hayes, J.R. ; Bhat, Ritesh ; Esagui, R. ; Koza, M.
Volume :
25
Issue :
2
fYear :
1989
Firstpage :
127
Lastpage :
128
Abstract :
Fully self-aligned InP/GaInAs single heterojunction bipolar transistors have been fabricated using a polyimide layer for the base-emitter contact separation. A common emitter current gain cutoff frequency fT=46 GHz and associated fmax=24 GHz were derived from the S-parameter measurements at a collector current density of 1.5*105 A/cm2.
Keywords :
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; solid-state microwave devices; 46 GHz; HBT; III-V semiconductors; InP-GaInAs; S-parameter measurements; SHBT; SHF; base-emitter contact separation; common emitter current gain cutoff frequency; fabrication; heterojunction bipolar transistors; microwave device; polyimide layer; self aligned device; single heterojunction;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19890093
Filename :
14263
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=795576
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