• DocumentCode
    795576
  • Title

    Fully self-aligned microwave InP/GaInAs single heterojunction bipolar transistors

  • Author

    Schumacher, L. ; Hayes, J.R. ; Bhat, Ritesh ; Esagui, R. ; Koza, M.

  • Volume
    25
  • Issue
    2
  • fYear
    1989
  • Firstpage
    127
  • Lastpage
    128
  • Abstract
    Fully self-aligned InP/GaInAs single heterojunction bipolar transistors have been fabricated using a polyimide layer for the base-emitter contact separation. A common emitter current gain cutoff frequency fT=46 GHz and associated fmax=24 GHz were derived from the S-parameter measurements at a collector current density of 1.5*105 A/cm2.
  • Keywords
    III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; solid-state microwave devices; 46 GHz; HBT; III-V semiconductors; InP-GaInAs; S-parameter measurements; SHBT; SHF; base-emitter contact separation; common emitter current gain cutoff frequency; fabrication; heterojunction bipolar transistors; microwave device; polyimide layer; self aligned device; single heterojunction;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19890093
  • Filename
    14263
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=795576