• DocumentCode
    795593
  • Title

    Electrochemical sulphur passivation of InAs/GaSb strain layer superlattice detectors

  • Author

    Plis, Elena ; Rodriguez, J.-B. ; Lee, S.J. ; Krishna, Sanjay

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of New Mexico, Albuquerque, NM
  • Volume
    42
  • Issue
    21
  • fYear
    2006
  • Firstpage
    1248
  • Lastpage
    1249
  • Abstract
    Electrochemical passivation of InAs/GaSb type-II strain layer superlattice detectors is presented. Thickness and composition of the deposited sulphur coating were determined using auger electron spectroscopy. Passivation lead to a decrease in the dark current density and the dynamic impedance-area product at zero bias (R0A) improved by three orders of magnitude at 50 K
  • Keywords
    Auger electron spectra; III-V semiconductors; current density; gallium compounds; indium compounds; infrared detectors; passivation; photodiodes; semiconductor superlattices; 50 K; Auger electron spectroscopy; InAs-GaSb; dark current density; dynamic impedance-area product; electrochemical passivation; infrared detectors; sulphur coating; type-II strain layer superlattice detectors;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • Filename
    1715210
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=795593