Title :
100h II-VI blue-green laser diode
Author :
Taniguchi, S. ; Hino, T. ; Itoh, S. ; Nakano, K. ; Nakayama, N. ; Ishibashi, A. ; Ikeda, M.
Author_Institution :
Res. Center, Sony Corp., Yokohama, Japan
fDate :
3/14/1996 12:00:00 AM
Abstract :
By reducing the dark-spot density to <3×103 cm -2, device lifetime exceeding 100 h has been obtained for a ZnCdSe-ZnSSe-ZnMgSSe single quantum well separate-confinement heterostructure laser diode (LD) under room temperature continuous-wave operation with a constant light output power of 1 mW. The threshold current density is 533 A/cm2 and the lasing wavelength is 514.7 nm. Considering the dark-spot density, we have concluded that the failure of this LD is not caused by degradation from macroscopic defects such as stacking faults, but by recombination enhanced defect reaction
Keywords :
II-VI semiconductors; cadmium compounds; current density; life testing; optical testing; quantum well lasers; semiconductor device testing; stacking faults; zinc compounds; 1 mW; 100 h; 514.7 nm; II-VI blue-green laser diode; LD failure; ZnCdSe-ZnSSe-ZnMgSSe; ZnCdSe/ZnSSe/ZnMgSSe single quantum well separate-confinement heterostructure laser diode; constant light output power; dark-spot density; device lifetime; lasing wavelength; macroscopic defect; recombination enhanced defect reaction; room temperature continuous-wave operation; stacking faults; threshold current density;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19960415
