Analysis, fabrication, and characterization of 1.55-μm selection-free tapered stripe DFB lasers

Author

Grillot, F. ; Thedrez, B. ; Mallecot, F. ; Chaumont, C. ; Hubert, S. ; Martineau, M.F. ; Pinquier, A. ; Roux, L.

Author_Institution

Alcatel Res. & Innovation, ALCATEL-OPTO+, Marcoussis, France

Volume

14

Issue

8

fYear

2002

Firstpage

1040

Lastpage

1042

Abstract

A new selection-free laser structure for monomode behavior based on an engineering of the stripe geometry is proposed. The structure is designed in order to eliminate facet phase effects and laser to laser variations. The effect of spatial hole burning is simulated and an enhancement of the sidemode suppression ratio (SMSR) with power is predicted and measured. Moreover, the sensitivity to technological fluctuations is theoretically analyzed. Experimentally, lasers having a 47-dB SMSR at 10 mW and an excellent homogeneity from laser to laser is obtained on a two inch wafer.

Keywords

antireflection coatings; distributed feedback lasers; ion implantation; laser modes; optical fabrication; optical hole burning; quantum well lasers; waveguide lasers; 1.55 micron; 10 mW; DFB lasers; antireflection coating; buried ridge stripe; chip to chip homogeneity; fabrication; facet phase effects; monomode behavior; phase-shift device; proton implantation; selection-free tapered stripe lasers; sidemode suppression ratio; single-mode laser; spatial hole burning; strained layer multiquantum wells; stripe geometry engineering; technological fluctuations sensitivity; threshold characteristics; Fluctuations; Geometrical optics; Gratings; Laser modes; Laser theory; Optical control; Optical design; Optical device fabrication; Power engineering and energy; Power measurement;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2002.1021962

Filename

1021962