Title :
UV-LED controlled GaN-based SAW phase shifter
Author :
Ciplys, D. ; Shur, Michael S. ; Rimeika, R. ; Sinius, J. ; Gaska, R. ; Bilenko, Yu. ; Fareed, Q.
Author_Institution :
Dept. of Electr., Rensselaer Polytech. Inst., Syst. Eng., NY
Abstract :
The UV-LED controlled phase shifter of an RF signal based on a GaN-sapphire surface-acoustic-wave (SAW) filter has been implemented. At the optical wavelength 298 nm and SAW frequency 307 MHz, the UV-induced relative change in SAW velocity per unit optical power density is 2times10-6 (muW/mm2)-1 corresponding to 3.7deg phase shift. The phase modulation of an RF signal by rectangular UV pulses has been demonstrated. The efficiency of the phase shifter can be considerably improved by proper selection of sheet-resistivity of the GaN layer
Keywords :
III-V semiconductors; UHF phase shifters; gallium compounds; light emitting diodes; phase modulation; sapphire; surface acoustic wave filters; wide band gap semiconductors; 298 nm; 307 MHz; GaN-Al2O3; RF signal modulation; SAW phase shifter; UV-LED controlled phase shifter; phase modulation; rectangular UV pulses; sheet resistivity; surface-acoustic-wave filter;
Journal_Title :
Electronics Letters
