• DocumentCode
    795637
  • Title

    UV-LED controlled GaN-based SAW phase shifter

  • Author

    Ciplys, D. ; Shur, Michael S. ; Rimeika, R. ; Sinius, J. ; Gaska, R. ; Bilenko, Yu. ; Fareed, Q.

  • Author_Institution
    Dept. of Electr., Rensselaer Polytech. Inst., Syst. Eng., NY
  • Volume
    42
  • Issue
    21
  • fYear
    2006
  • Firstpage
    1254
  • Lastpage
    1255
  • Abstract
    The UV-LED controlled phase shifter of an RF signal based on a GaN-sapphire surface-acoustic-wave (SAW) filter has been implemented. At the optical wavelength 298 nm and SAW frequency 307 MHz, the UV-induced relative change in SAW velocity per unit optical power density is 2times10-6 (muW/mm2)-1 corresponding to 3.7deg phase shift. The phase modulation of an RF signal by rectangular UV pulses has been demonstrated. The efficiency of the phase shifter can be considerably improved by proper selection of sheet-resistivity of the GaN layer
  • Keywords
    III-V semiconductors; UHF phase shifters; gallium compounds; light emitting diodes; phase modulation; sapphire; surface acoustic wave filters; wide band gap semiconductors; 298 nm; 307 MHz; GaN-Al2O3; RF signal modulation; SAW phase shifter; UV-LED controlled phase shifter; phase modulation; rectangular UV pulses; sheet resistivity; surface-acoustic-wave filter;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • Filename
    1715214
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=795637