Title :
Temperature sensitivity of 1300-nm InGaAsN quantum-well lasers
Author :
Tansu, N. ; Mawst, L.J.
Author_Institution :
Dept. of Electr. & Comput. Eng., Wisconsin Univ., Madison, WI, USA
Abstract :
The temperature sensitivity of metal-organic chemical vapor deposition (MOCVD)-grown highly strained (/spl Delta//spl alpha///spl alpha//spl sim/2.7%) In/sub 0.4/Ga/sub 0.6/Asand In/sub 0.4/Ga/sub 0.6/As/sub 0.995/N/sub 0.005/ quantum-well (QW) active lasers, with lasing wavelength of 1.185 and 1.295 μm, respectively, is analyzed in terms of measured fundamental device parameters. From our analysis, the lower To values for the InGaAsN QW lasers can be explained in terms of the temperature dependence of the current injection efficiency, presumably due to increased carrier leakage in the InGaAsN QW lasers.
Keywords :
III-V semiconductors; MOCVD; gallium arsenide; gallium compounds; indium compounds; laser transitions; quantum well lasers; sensitivity; thermo-optical effects; 1.185 micron; 1.295 micron; 1300 nm; 1300-nm InGaAsN quantum-well lasers; In/sub 0.4/Ga/sub 0.6/As; In/sub 0.4/Ga/sub 0.6/As/sub 0.995/N/sub 0.005/; InGaAsN; InGaAsN QW lasers; MOCVD grown; carrier leakage; current injection efficiency; fundamental device parameters; highly strained; lasing wavelength; metal-organic chemical vapor deposition; quantum-well active lasers; temperature dependence; temperature sensitivity; Chemical lasers; Chemical vapor deposition; Gallium arsenide; Laser theory; Quantum well lasers; Semiconductor lasers; Temperature dependence; Temperature distribution; Temperature sensors; Threshold current;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2002.1021966
