• DocumentCode
    795680
  • Title

    Polarisation characteristics of InGaAlP/AlGaAs visible vertical cavity surface emitting lasers

  • Author

    Chen, Y.H. ; Wilkinson, C.I. ; Woodhead, J. ; Button, C.C. ; David, J.P.R. ; Pate, M.A. ; Robson, P.N.

  • Author_Institution
    Dept. of Electron. & Electr. Eng., Sheffield Univ., UK
  • Volume
    32
  • Issue
    6
  • fYear
    1996
  • fDate
    3/14/1996 12:00:00 AM
  • Firstpage
    559
  • Lastpage
    560
  • Abstract
    The first observation of polarisation selectivity in In0.48 Ga1-xAlxP based visible vertical cavity surface emitting lasers grown on 10° off axis (100) substrates is reported. All the measured devices show polarisation dominance in the ⟨011⟩ direction over a range of lasing wavelength (630 to 660 nm). The slope efficiency in this direction is typically 2 to 20 times that in the orthogonal ⟨01¯1⟩ direction. There is no evidence of polarisation switching with increased current
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; light polarisation; semiconductor lasers; surface emitting lasers; 630 to 660 nm; InGaAlP-AlGaAs; off axis substrates; polarisation selectivity; slope efficiency; visible vertical cavity surface emitting lasers;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19960389
  • Filename
    490472
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=795680