Title :
Room temperature mid-infrared quantum cascade lasers
Author :
Faist, J. ; Capasso, F. ; Sirtori, C. ; Sivco, D.L. ; Hutchinson, A.L. ; Cho, A.Y.
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
fDate :
3/14/1996 12:00:00 AM
Abstract :
Operation of a quantum cascade laser at λ~5 μm is reported up to 300 K in pulsed mode. The device uses a new design which incorporates a funnel injector and a three quantum well active region. This is the first mid-IR semiconductor laser operating at room temperature in this wavelength range. Optical powers of 15 mW at 274 K and 1.5 mW at 300 K are obtained
Keywords :
infrared sources; laser modes; optical design techniques; quantum well lasers; 1.5 mW; 15 mW; 274 K; 300 K; 5 mum; InGaAs-AlInAs; funnel injector; mid-IR semiconductor laser; mid-infrared quantum cascade lasers; optical powers; pulsed mode; room temperature; three quantum well active region; wavelength range;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19960395
