Development of temperature-stable thick-film dielectrics. I. Low K dielectric

Author

Chiou, Bi-Shiou

Author_Institution

Inst. of Electron., Nat. Chiao Tung Univ., Hsinchu, Taiwan

Volume

12

Issue

4

fYear

1989

fDate

12/1/1989 12:00:00 AM

Firstpage

789

Lastpage

797

Abstract

A temperature-stable low-dielectric constant (K~10) thick-film dielectric was developed. Dielectric formulations were prepared by combining appropriate amounts of α-Al₂O₃, γ-Al₂O₃, or TiO₂ with Frit G1 and/or Frit G2. A dual frit approach proves to be an effective method in eliminating the pinhole problems in the fabrication of thick-film capacitors. Substrate bodies and diffusion of electrode and substrate ingredients into the dielectric are two major factors which affect the dielectric properties of the capacitors. The low-K dielectric developed in this study can work adequately from 25°C to 500°C, and at 500°C for an extended period of time

Keywords

alumina; dielectric properties of solids; hybrid integrated circuits; integrated circuit technology; materials testing; permittivity; thick film capacitors; thick films; titanium compounds; α-Al₂O₃; γ-Al₂O₃; 25 to 500 degC; Al₂O₃; Frit G1; Frit G2; TiO₂; dielectric properties; dual frit; electrode ingredient diffusion; high temperature electronics; low permittivity dielectrics; low-dielectric constant; pinhole elimination; pinhole problems; substrate bodies; substrate ingredient diffusion; temperature-stable thick-film dielectrics; thick-film capacitors; Bonding; Capacitive sensors; Capacitors; Dielectric substrates; Electrodes; Fabrication; Glass; Gold; Temperature distribution; Thermal expansion;

fLanguage

English

Journal_Title

Components, Hybrids, and Manufacturing Technology, IEEE Transactions on

Publisher

ieee

ISSN

0148-6411

Type

jour

DOI

10.1109/33.49048

Filename

49048