Title :
Development of temperature-stable thick-film dielectrics. II. Medium-K dielectric
Author_Institution :
Inst. of Electron., Nat. Chiao Tung Univ., Hsinchu, Taiwan
fDate :
12/1/1989 12:00:00 AM
Abstract :
For pt.I see ibid., vol.12, no.4, p.789-97 (1989). A temperature-stable, medium dielectric constant (K=100) thick-film dielectric is developed for high-temperature electronic instrumentation. A theoretical model predicts a temperature-insensitive dielectric in the glass-Bi4Ti3O12-SrTiO 3 system, while experimental results suggest an optimum composition in the glass-SrTiO3-BaTiO3 system. Interfacial polarization is the major factor which causes the deviation. The medium-K dielectric, when properly fired, terminated, and heat-treated, can work adequately from 25°C to 400°C
Keywords :
barium compounds; bismuth compounds; dielectric properties of solids; hybrid integrated circuits; integrated circuit technology; materials testing; permittivity; strontium compounds; thick films; 25 to 400 degC; CaO-BaO-Al2O3-B2O3 -SiO2-Bi4Ti3O12-SrTiO 3; PbO-B2O3-SiO2-Al2O 3-Bi4Ti3O12-SrTiO3 ; SrTiO3-BaTiO3; dielectric firing; dielectric heat treatment; dielectric termination; high-temperature electronic instrumentation; interfacial polarization; medium dielectric constant; medium permittivity dielectrics; optimum composition; temperature-insensitive dielectric; temperature-stable thick-film dielectrics; Capacitors; Crystallization; Dielectric constant; Dielectric materials; Dispersion; Glass; Microelectronics; Polarization; Predictive models; Temperature distribution;
Journal_Title :
Components, Hybrids, and Manufacturing Technology, IEEE Transactions on
