• DocumentCode
    795907
  • Title

    Photoluminescence excitation and deexcitation mechanism of erbium doped silicon monoxide

  • Author

    Roberts, S.W. ; Parker, G.J.

  • Author_Institution
    Dept. of Electron. & Comput. Sci., Southampton Univ., UK
  • Volume
    32
  • Issue
    6
  • fYear
    1996
  • fDate
    3/14/1996 12:00:00 AM
  • Firstpage
    589
  • Lastpage
    591
  • Abstract
    The excitation of photoluminescence in erbium doped silicon monoxide is shown to be possible over a continuous pumping spectrum and the decay lifetimes are found to decrease with increasing temperature. These experimental results are explained in the context of a possible indirect pumping mechanism and a back-transfer mechanism, both demonstrating the coupling of the Er3- ions to the SiO electronic bands
  • Keywords
    erbium; optical pumping; photoluminescence; radiative lifetimes; silicon compounds; vacuum deposited coatings; Er3- ions; SiO electronic bands; SiO:Er; back-transfer; continuous pumping spectrum; decay lifetimes; deexcitation; erbium doped silicon monoxide; excitation; indirect pumping; photoluminescence;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19960404
  • Filename
    490493
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=795907