Vertically coupled InP microdisk switching devices with electroabsorptive active regions

Author

Djordjev, Kostadin ; Choi, Seung-June ; Choi, Sang-Jun ; Dapkus, P.D.

Author_Institution

Dept. of Electr. Eng.-Electrophys., Univ. of Southern California, Los Angeles, CA, USA

Volume

14

Issue

8

fYear

2002

Firstpage

1115

Lastpage

1117

Abstract

InP vertically coupled microdisk resonator/waveguide switching devices with an electroabsorptive (EA) active region are demonstrated for the first time. The devices exhibit single-mode operation, large free spectral range of 10.5 nm and a high quality factor of 5700. The EA effect provides a way of loss-trimming the resonant characteristics. Active switches, routers, and fast modulators based on these devices are envisioned as part of a WDM system.

Keywords

III-V semiconductors; electro-optical modulation; electro-optical switches; electroabsorption; indium compounds; integrated optics; micro-optics; optical resonators; optical waveguide components; quantum confined Stark effect; wavelength division multiplexing; InGaAsP-InP; WDM system; active switches; demultiplexers; electroabsorptive active regions; fast modulators; free spectral range; microresonators; optical waveguide filters; quality factor; quantum confined Stark effect; resonant characteristics loss-trimming; routers; single-mode operation; vertically coupled InP microdisk switching devices; vertically coupled microdisk resonator/waveguide switching devices; Carrier confinement; Coupling circuits; Indium phosphide; Optical filters; Optical losses; Optical modulation; Optical resonators; Optical waveguides; Q factor; Resonance;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2002.1021987

Filename

1021987