Title :
Temperature-independent output voltage generated by threshold voltage of an NMOS transistor
Author :
Manku, T. ; Wang, Y.
Author_Institution :
Tech. Univ. Nova Scotia, Halifax, NS, Canada
fDate :
6/8/1995 12:00:00 AM
Abstract :
A method for achieving a temperature-independent output voltage using a single n-channel device is presented. The underlying theory is presented with the measurement results. The output voltage was measured to have a temperature coefficient of 13 ppm/°C. Three CMOS process technologies were examined and the output voltage reference was found to vary between 1.17 and 1.18 V
Keywords :
CMOS analogue integrated circuits; reference circuits; 1.17 to 1.18 V; CMOS process technologies; NMOS transistor; NMOSFET; n-channel device; temperature-independent output voltage; threshold voltage;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950647
