Near-ideal platinum-GaN Schottky diodes

Author

Mohammad, S.N. ; Fan, Z. ; Botchkarev, A.E. ; Kim, W. ; Aktas, O. ; Salvador, A. ; Morkoç, H.

Author_Institution

Coordinated Sci. Lab., Illinois Univ., Urbana, IL, USA

Volume

32

Issue

6

fYear

1996

fDate

3/14/1996 12:00:00 AM

Firstpage

598

Lastpage

599

Abstract

Fabrication and characterisation of nearly ideal Pt/n-GaN Schottky barrier diodes are described. The n-GaN employed was grown by the reactive molecular beam epitaxy method. The capacitance/voltage (C/V) characteristics indicate marginal trap density in the semiconductor, and the current/voltage (I/V) characteristics give an ideality factor very close to unity. Barrier height deduced both from I/V and C/V measurements are ~1.10 eV provided the influence of scattering is considered negligible. This confirms again the near absence of interface traps in the diodes, and suggests that the effective mass of an electron in GaN is 0.2±0.02

Keywords

III-V semiconductors; Schottky diodes; characteristics measurement; electron traps; gallium compounds; molecular beam epitaxial growth; platinum; semiconductor epitaxial layers; semiconductor growth; Pt-GaN; Schottky barrier diodes; barrier height; capacitance/voltage characteristics; current/voltage characteristics; effective electron mass; ideality factor; marginal trap density; reactive molecular beam epitaxy method;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19960354

Filename

490498