• DocumentCode
    796
  • Title

    High-voltage EDMOS transistor with dual work function gate

  • Author

    Baek, Ki-Ju ; Lee, Dong-Ho ; Kim, Young-Sik ; Na, Kee-Yeol

  • Author_Institution
    Department of Semiconductor Engineering, Chungbuk National University, Cheongju, Chungbuk, Republic of Korea
  • Volume
    49
  • Issue
    23
  • fYear
    2013
  • fDate
    Nov. 7 2013
  • Firstpage
    1486
  • Lastpage
    1487
  • Abstract
    A high-voltage extended drain MOS (EDMOS) transistor with a dual work function gate (DWFG) is discussed. This device enhances device performance by modifying the electric field in the channel. For DWFG EDMOS device fabrication, the polycrystalline silicon gates on the source and drain sides are doped by p + and n + ion implantation, respectively. Experimental results from the fabricated DWFG EDMOS devices show improved transconductance (gm), drain conductance (gds) and specific on-resistance (RON) characteristics without breakdown voltage reduction.
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2013.1301
  • Filename
    6675744
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=796