Title :
Ultimate performances of an all-optical sampler based on ultrafast saturable absorbers created by heavy ion irradiation
Author :
Lopez, J. ; Stelmakh, N. ; Lourtioz, J.M.
Author_Institution :
Inst. d´´Electron. Fondamentale, Univ. de Paris-Sud, Orsay, France
Abstract :
We analyze the ultimate performances of an all-optical sampler based on ultrafast bulk GaAs saturable absorbers created by ion irradiation. The ion irradiation technique provides a unique way to adapt the sampler resolution to the optical pulse width since the absorber relaxation time can be adjusted over more than three decades with the irradiation dose. Subpicosecond time resolutions with pulse contrast of /spl sim/100 are achievable by using high irradiation doses. In standard conditions, the sampler noise performances are limited by the detector noise and sampling pulse amplitude fluctuations. Picosecond laser diode pulses with an average power of less than one microwatt are already measurable. The ultimate limit is imposed by the absorber luminescence shot noise.
Keywords :
III-V semiconductors; carrier lifetime; fluctuations; gallium arsenide; high-speed optical techniques; ion beam effects; ion recombination; laser mode locking; laser variables measurement; optical materials; optical saturable absorption; optical testing; photodetectors; photoluminescence; semiconductor device testing; shot noise; GaAs; absorber luminescence shot noise; absorber relaxation time; all-optical sampler; average power; detector noise; heavy ion irradiation; ion irradiation; ion irradiation technique; irradiation dose; optical pulse width; picosecond laser diode pulses; sampler noise performances; sampling pulse amplitude fluctuations; subpicosecond time resolutions; ultimate performance; ultrafast bulk GaAs saturable absorbers; ultrafast saturable absorbers; Detectors; Diode lasers; Fluctuations; Gallium arsenide; Noise level; Optical noise; Optical pulses; Performance analysis; Pulse measurements; Sampling methods;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2002.1021999