Title :
Measurement of a damaged layer thickness with reflection acoustic microscope
Author :
Ishikawa, Isao ; Kanda, Hiroshi ; Katakura, Kageyoshi ; Semba, Takuya
Author_Institution :
Hitachi Constr. Machinery Co. Ltd., Tokyo, Japan
Abstract :
An acoustic microscope was used for determining the frequency dependence of surface acoustic wave (SAW) velocity on a specimen whose silicon single-crystal surface was machined under various conditions. Consequently, thickness of the damaged layers could be estimated from the curvature points of frequency dispersion curves of the SAW velocity. It was revealed that thicknesses of the damaged layers can be estimated through rough approximation by about one-half the wavelength determined by the frequency at curvature points. From specimens possessing two damaged layers, frequency dispersion curves with two curvature lines can be obtained. From the curvature point at high frequencies the thickness of the top damaged layer can be determined. On the other hand, from the curvature point at low frequencies, the thickness of the inner damaged layer can also be determined. By choosing an acoustic lens as the condition for exciting SAWs, images can be observed while varying the frequency. From observation results obtained with this method, the distribution in the depth direction can be clarified.<>
Keywords :
acoustic microscopy; elemental semiconductors; silicon; surface acoustic waves; thickness measurement; ultrasonic velocity measurement; SAW velocity; Si; acoustic lens; curvature points; damaged layer thickness; depth direction; frequency dispersion curves; inner damaged layer; reflection acoustic microscope; thickness; top damaged layer; Acoustic measurements; Acoustic reflection; Acoustic waves; Frequency dependence; Frequency estimation; Microscopy; Rough surfaces; Silicon; Surface acoustic waves; Thickness measurement;
Journal_Title :
Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on