Low-power static frequency divider using an InP-based monolithic RTD/HBT technology

Author

Kim, T. ; Jeong, Y. ; Yang, K.

Volume

42

Issue

1

fYear

2006

Abstract

A low-power static frequency divider using an RTD/HBT MOnostable-BIstable transition Logic Element (MOBILE) scheme is proposed for the first time and operation of the circuit is demonstrated up to 20 GHz. The divided-by-two static frequency divider has been successfully implemented in an InP-based monolithic RTD/HBT IC technology. The number of devices used in the static frequency divider has been significantly reduced by using the proposed MOBILE scheme. The fabricated frequency divider operates at a clock frequency up to 20 GHz and dissipates d.c. power of 51 mW at a power supply of 3.3 V

Keywords

III-V semiconductors <low-power static freq. divider, InP-based monolithic RTD/HBT technol.>; bipolar MIMIC <low-power static freq. divider, InP-based monolithic RTD/HBT technol.>; bipolar MMIC <low-power static freq. divider, InP-based monolithic RTD/HBT technol.>; frequency dividers <low-power static freq. divider, InP-based monolithic RTD/HBT technol.>; heterojunction bipolar transistors <low-power static freq. divider, InP-based monolithic RTD/HBT technol.>; indium compounds <low-power static freq. divider, InP-based monolithic RTD/HBT technol.>; low-power electronics <static freq. divider, InP-based monolithic RTD/HBT technol.>; resonant tunnelling diodes <low-power static freq. divider, InP-based monolithic RTD/HBT technol.>; 3.3 V; 51 mW; InP; low power static frequency divider; monolithic IC technology; monolithic RTD/HBT technology; monostable blstable transition logic element scheme;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:20062339

Filename

1577601