C-band emission from GaInNAsSb VCSEL on GaAs

Author

Laurand, N. ; Calvez, S. ; Sun, H.D. ; Dawson, M.D. ; Gupta, J.A. ; Aers, G.C.

Volume

42

Issue

1

fYear

2006

Abstract

The 1.55 μm pulsed operation of an optically-pumped GaInNAsSb vertical-cavity surface-emitting laser (VCSEL) is reported. The structure employs a dielectric (SiO₂/TiO₂) top mirror, while the bottom mirror and active region were grown on GaAs by MBE. Temperature-dependent (10-40°C) laser measurements were made for an as-grown sample and an annealed sample, both having a room-temperature lasing wavelength of 1547 nm. Results indicate an annealing-induced blue-shift of the gain peak

Keywords

III-V semiconductors <GaInNAsSb VCSEL, GaAs, c-band emission>; dielectric materials <GaInNAsSb VCSEL, GaAs, c-band emission>; gallium arsenide <GaInNAsSb VCSEL, GaAs, c-band emission>; indium compounds <GaInNAsSb VCSEL, GaAs, c-band emission>; laser beam applications <GaInNAsSb VCSEL, GaAs, c-band emission>; molecular beam epitaxial growth <GaInNAsSb VCSEL, GaAs, c-band emission>; nitrogen compounds <GaInNAsSb VCSEL, GaAs, c-band emission>; optical pumping <GaInNAsSb VCSEL, GaAs, c-band emission>; photoluminescence <GaInNAsSb VCSEL, GaAs, c-band emission>; surface emitting lasers <GaInNAsSb VCSEL, GaAs, c-band emission>; 1.55 micron; 10 to 40 C; 1547 nm; C band emission; GaAs; GaInNAsSb; MBE; SiO₂-TiO₂; annealed sample; annealing-induced blue-shift; as-grown sample; dielectric top mirror; optically pumped VCSEL; pulsed operation; room-temperature lasing wavelength; vertical cavity surface emitting laser;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:20063986

Filename

1577602