Title :
1.55 mu m DFB lasers with Fe-doped InP current blocking layers grown by two-step MOVPE
Author :
Wada, Hiroyuki ; Homidawa, H. ; Matsui, Yusuke ; Ogawa, Y. ; Kawai, Yusuke
Author_Institution :
OKI Electr. Ind. Co., Ltd., Tokyo, Japan
Abstract :
High-speed 1.55 mu m GaInAsP-InP DFB lasers with Fe-doped InP current blocking layers are reported. The lasers were fabricated on corrugated p-InP substrates by two-step MOVPE for the first time. A threshold current of 30 mA and a differential quantum efficiency of 38% were obtained. A parasitic capacitance as low as 4 pF was achieved without any complicated processes.
Keywords :
III-V semiconductors; diffraction gratings; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; laser transitions; optical waveguides; optical workshop techniques; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; 1.55 micron; 30 mA; 38 percent; 4 pF; DFB lasers; III-V semiconductors; InP; InP-GaInAsP-InP:Fe; corrugated p-type substrates; current blocking layers; differential quantum efficiency; epitaxial growth; fabrication process; gratings distributed feedback type; parasitic capacitance; semiconductor lasers; threshold current; two-step MOVPE;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890097
