Author :
Yang, H. ; Lordi, V. ; Harris, J.S.
Abstract :
The measurement of photoluminescence (PL) and electroabsorption spectra in strain compensated GaNAs/GaAsSb type-II quantum wells grown on GaAs substrates using molecular beam epitaxy is reported. The bilayer quantum well (GaN0.02As0.98/GaAs0.8Sb0.2) shows a room temperature PL peak at 1300 nm, and a blue shift of the Franz-Keldysh type oscillation is observed in the multiple quantum wells consisting of GaN0.03As0.97 and GaAs0.84Sb0.16
Keywords :
III-V semiconductors <GaNAs/GaAsSb heterojunctions, PL and electroabsorption>; electroabsorption <GaNAs/GaAsSb heterojunctions, PL and electroabsorption>; gallium arsenide <GaNAs/GaAsSb heterojunctions, PL and electroabsorption>; gallium compounds <GaNAs/GaAsSb heterojunctions, PL and electroabsorption>; photoluminescence <GaNAs/GaAsSb heterojunctions, PL and electroabsorption>; semiconductor epitaxial layers <GaNAs/GaAsSb heterojunctions, PL and electroabsorption>; semiconductor heterojunctions <GaNAs/GaAsSb heterojunctions, PL and electroabsorption>; semiconductor quantum wells <GaNAs/GaAsSb heterojunctions, PL and electroabsorption>; 1300 nm; Franz-Keldysh type oscillation; GaAs substrates; GaAs0.84Sb0.16; GaN0.02As0.98/GaAs0.8Sb0.2; GaN0.03As0.97; GaNAs-GaAsSb; bilayer quantum well; blue shift; electroabsorption; heterojunctions; molecular beam epitaxy; photoluminescence; strain compensated type-11 quantum wells;
