Title :
MESFET lift-off from GaAs substrate to glass host
Author :
Van Hoof, Chris ; De Raedt, W. ; Van Rossum, M. ; Borghs, G.
Author_Institution :
Interuniv. Micro-Electron. Center, Leuven, Belgium
Abstract :
The authors report for the first time on epitaxially grown fully processed MESFETs lifted off from the GaAs substrate and deposited on glass as a new host material. The layer thickness of the epitaxial film was 0.5 mu m. Very good device performance was obtained with gm values of 155 mS/mm. This opens interesting possibilities for hybrid or monolithic integration of III-V technology with other materials technologies.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; etching; gallium arsenide; glass; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor technology; substrates; 0.5 micron; 155 mS; GaAs; GaAs substrate; III-V technology; MESFET lift-off; epitaxial film; fabrication process; fully processed device transplantation; glass host; glass substrate; molecular beam epitaxy; semiconductor etching; transconductance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890099
