DocumentCode :
796523
Title :
An ECL to CMOS level converter with complementary bipolar output stage
Author :
Rau, Martin ; Pfleidere, Hans-Jörg
Author_Institution :
Dept. of Electr. Eng., Ulm Univ., Germany
Volume :
30
Issue :
7
fYear :
1995
fDate :
7/1/1995 12:00:00 AM
Firstpage :
781
Lastpage :
787
Abstract :
A novel circuit scheme for the fast amplification of digital signals is presented. A fully complementary bipolar output stage realizes small delay and steep output signal slopes. The improved performance is achieved by intentionally saturating the bipolar output transistors, which allows one to supply the maximum current to the output. We evaluate the performance of saturated bipolar transistors fabricated on bulk silicon. Compared to known circuit schemes, the proposed circuit shows significantly reduced total delay and power dissipation. The driving capability for large capacitive loads is improved. Samples produced in a 2 μm-BiCMOS technology verify the simulated performance
Keywords :
BiCMOS digital integrated circuits; BiCMOS logic circuits; convertors; delays; digital signals; emitter-coupled logic; 2 micron; BiCMOS technology; ECL to CMOS level converter; bipolar output transistor saturation; digital signal amplification; driving capability; fully complementary bipolar output stage; large capacitive loads; output signal slopes; power dissipation; total delay; BiCMOS integrated circuits; Bipolar transistors; CMOS logic circuits; CMOS technology; Circuit simulation; Current supplies; Delay; Power dissipation; Silicon; Voltage;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/4.391117
Filename :
391117
Link To Document :
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