A silicon electrostatic ultrasonic transducer

Author

Suzuki, Kenichiro ; Higuchi, Kohei ; Tanigawa, Hiroshi

Author_Institution

NEC Corp., Kanagawa, Japan

Volume

36

Issue

6

fYear

1989

Firstpage

620

Lastpage

627

Abstract

An electric ultrasonic transducer is developed by using a silicon IC process. Design considerations are first presented to obtain high sensitivity and the desired frequency responses in air. The measured transmitter sensitivity is 19.1 dB (0 dB=1 mu bar/V) at a point 50 cm away from the devices, when the devices are operated at 150 kHz. The receiving sensitivity is 0.47 mV/Pa in the 10-130-kHz range, with bias voltages as low as 30 V. An electronic sector scanning operation is also achieved by time-sequentially driving seven elements arranged in a linear array on the same chip. The results should be helpful in the design of phased-array transducers integrated with electronic scanning circuits.<>

Keywords

electrostatic devices; elemental semiconductors; silicon; ultrasonic transducers; 10 to 130 kHz; 150 kHz; Si; bias voltages; electronic sector scanning operation; electrostatic ultrasonic transducer; frequency responses; linear array; phased-array transducers; sensitivity; time-sequentially driving; transmitter sensitivity; Circuits; Electrostatic measurements; Frequency; Low voltage; Process design; Silicon; Transmitters; Ultrasonic transducers; Ultrasonic variables measurement;

fLanguage

English

Journal_Title

Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on

Publisher

ieee

ISSN

0885-3010

Type

jour

DOI

10.1109/58.39112

Filename

39112