• DocumentCode
    796557
  • Title

    Microchip vertical external cavity surface emitting lasers

  • Author

    Hastie, J.E. ; Hopkins, J.-M. ; Jeon, C.W. ; Calvez, S. ; Burns, D. ; Dawson, M.D. ; Abram, R. ; Riis, E. ; Ferguson, A.I. ; Alford, W.J. ; Raymond, T.D. ; Allerman, A.A.

  • Author_Institution
    Inst. of Photonics, Univ. of Strathclyde, Glasgow, UK
  • Volume
    39
  • Issue
    18
  • fYear
    2003
  • Firstpage
    1324
  • Lastpage
    1326
  • Abstract
    Monolithic vertical external cavity surface emitting lasers of cavity mode volume <1 mm3 have been fabricated in the 850 and 980 nm wavelength range. Pump-limited output power >350 mW in a TEM00 mode was obtained at 850 nm. Output power >2.5 W was obtained at 980 nm.
  • Keywords
    distributed feedback lasers; laser cavity resonators; laser stability; semiconductor lasers; surface emitting lasers; 350 mW to 2.5 W; 850 to 980 nm; DBR mirror; diode-pumped VECSELs; microchip surface emitting lasers; monolithic SEL; stable high power operation; vertical external cavity SEL;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20030839
  • Filename
    1234622
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=796557