DocumentCode :
796557
Title :
Microchip vertical external cavity surface emitting lasers
Author :
Hastie, J.E. ; Hopkins, J.-M. ; Jeon, C.W. ; Calvez, S. ; Burns, D. ; Dawson, M.D. ; Abram, R. ; Riis, E. ; Ferguson, A.I. ; Alford, W.J. ; Raymond, T.D. ; Allerman, A.A.
Author_Institution :
Inst. of Photonics, Univ. of Strathclyde, Glasgow, UK
Volume :
39
Issue :
18
fYear :
2003
Firstpage :
1324
Lastpage :
1326
Abstract :
Monolithic vertical external cavity surface emitting lasers of cavity mode volume <1 mm3 have been fabricated in the 850 and 980 nm wavelength range. Pump-limited output power >350 mW in a TEM00 mode was obtained at 850 nm. Output power >2.5 W was obtained at 980 nm.
Keywords :
distributed feedback lasers; laser cavity resonators; laser stability; semiconductor lasers; surface emitting lasers; 350 mW to 2.5 W; 850 to 980 nm; DBR mirror; diode-pumped VECSELs; microchip surface emitting lasers; monolithic SEL; stable high power operation; vertical external cavity SEL;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:20030839
Filename :
1234622
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=796557
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