DocumentCode
796718
Title
Effects of Ionizing Radiation on Monolithic PMOS Inverters
Author
Cooper, J.A.
Volume
17
Issue
6
fYear
1970
Firstpage
96
Lastpage
99
Abstract
The problem of radiation hardening of metal-oxidesemiconductor (MOS) systems is discussed from a circuit viewpoint. An inverter chain is studied, and its performance in radiation is related to device quality. Techniques for testing and hardening circuits are given.
Keywords
Circuit synthesis; Circuit testing; Circuits and systems; Degradation; Frequency; Ionizing radiation; Physics; Propagation delay; Pulse inverters; Radiation hardening;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.1970.4325773
Filename
4325773
Link To Document