Short-Term Annealing in p-Type Silicon

A series of experiments was performed to study the effects of acceptor-type, carrier-concentration, and material-growth techniques on the short-term annealing of neutron damage to p-type silicon. No significant dependence of the annealing on these parameters was observed. The parameter most important to the annealing rate is the injected minority-carrier concentration (¿n). The use of extremely low injection concentrations, a very short neutron burst, and early time measurements has resulted in the detection of anneal factors as high as 50 in the tests reported here. No anneal factors of this magnitude have ever been reported before.