Title :
25-100°C automatic power control free 600 Mbit/s modulation of 0.98 μm InGaAs/AlGaAs laser for high-speed data link
Author :
Chida, H. ; Fukagai, K. ; Miyazaki, T. ; Ishikawa, S.
Author_Institution :
Opto-Electron. Res. Labs., NEC Corp., Ibaraki, Japan
fDate :
11/9/1995 12:00:00 AM
Abstract :
Highly stable, temperature insensitive laser diodes emitting at 0.98 μm have been developed. A low 2.3 mA threshold current was achieved at 25°C, and a high 0.48 W/A slope efficiency was achieved at 100°C by optimising the waveguide structure, cavity length and front mirror reflectance. The power attenuation ratio from 25 to 100°C was as low as -0.8 dB under a 30 mA drive current. The eye-opening ratio was >94% up to 100°C under automatic power control (APC) free 600 Mbit/s modulation and 2.3 mA DC bias
Keywords :
III-V semiconductors; aluminium compounds; data communication equipment; digital communication; gallium arsenide; indium compounds; laser beam applications; laser cavity resonators; laser stability; laser transitions; optical modulation; optical transmitters; quantum well lasers; waveguide lasers; 0.98 micron; 2.3 mA; 25 to 100 C; 30 mA; 600 Mbit/s; InGaAs-AlGaAs; automatic power control free modulation; cavity length; front mirror reflectance; high-speed data link; temperature insensitive laser diodes; threshold current; waveguide structure;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19951361
