Title :
High electron mobility in SiGe/Si n-MODFET structures on sapphire substrates
Author :
Mueller, C.H. ; Croke, E.T. ; Alterovitz, S.A.
Author_Institution :
Analex Corp., Cleveland, OH, USA
Abstract :
For the first time, SiGe/Si n-modulation doped field effect transistor (n-MODFET) structures have been grown on sapphire substrates. A room temperature electron mobility value of 1271 cm2/V-s at an electron carrier density (ne) of 1.6×1012 cm-2 was obtained. At 250 mK, the mobility increases to 13 313 cm2/V-s (ne=1.33×1012 cm-2) and Shubnikov-de Haas oscillations appear, showing excellent confinement of the two-dimensional electron gas.
Keywords :
Ge-Si alloys; electron density; electron mobility; elemental semiconductors; high electron mobility transistors; semiconductor materials; two-dimensional electron gas; 250 mK; Shubnikov-de-Haas oscillations; SiGe-Si; SiGe/Si; electron carrier density; electron mobility; n-MODFET structures; sapphire substrates; two-dimensional electron gas;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20030871
