Low threshold (1.7 mA) and high bandwidth (14 GHz) 1.55 μm p-substrate lasers using semi-insulating HVPE regrowth

Author

Evaldsson, P. ; Eriksson, U. ; Stalnacke, B. ; Lourdudos, S. ; Wallin, J. ; Kjebon, O. ; Willèn, B.

Author_Institution

Dept. of Electron., R. Inst. of Technol., Stockholm, Sweden

Volume

31

Issue

23

fYear

1995

fDate

11/9/1995 12:00:00 AM

Firstpage

2012

Lastpage

2014

Abstract

A 1.55 μm p-substrate laser with a very low threshold current of 1.7 mA and a high bandwidth of 14 GHz is demonstrated. This combination of low threshold current and high frequency response was accomplished by using strained quantum wells and semi-insulating blocking layers grown by hydride-VPE. The authors believe this is the first report on the combination of a low threshold current and a high frequency response for a p-substrate laser. This component will be useful in high speed parallel optical interconnects for future broadband systems

Keywords

frequency response; optical interconnections; quantum well lasers; semiconductor growth; semiconductor laser arrays; vapour phase epitaxial growth; 1.55 micrometre; 1.7 mA; 14 GHz; frequency response; hydride-VPE; p-substrate laser; parallel optical interconnects; semi-insulating HVPE regrowth; semi-insulating blocking layers; strained quantum wells; threshold current;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19951347

Filename

490608