DocumentCode :
796887
Title :
Range of Secondary Eiectrons in Sapphiire
Author :
Harrity, John W.
Author_Institution :
Gulf Radiation Technology, a Division of Gulf Energy & Environmental Systems, Inc. San Diego, California
Volume :
17
Issue :
6
fYear :
1970
Firstpage :
200
Lastpage :
204
Abstract :
During irradiation tests on a Czochralski-grown single-crystal sapphire sample, a trapping phenomenon was observed which led to an apparent nonlinear dependence of the radiation-induced conductivity on dose rate. These data have been interpreted in terms of a minimum projected range of the secondary electrons generated by the primary beam. A range of about 1000 Ã… is calculated.
Keywords :
Aluminum; Charge transfer; Conducting materials; Conductivity; Electron beams; Electron traps; Ionization; Ionizing radiation; Space vector pulse width modulation; Thermistors;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.1970.4325791
Filename :
4325791
Link To Document :
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