Title :
High speed, high efficiency modulator module with polarisation insensitivity and very low chirp
Author :
Wakita, K. ; Yoshino, K. ; Kotaka, I. ; Kondo, S. ; Noguchi, Y.
Author_Institution :
NTT Opto-Electron. Labs., Kanagawa, Japan
fDate :
11/9/1995 12:00:00 AM
Abstract :
Low chirp (α<1), polarisation-insensitive (<1 dB) electroabsorption modulator modules with high speed (~20 GHz) and high efficiency (1.5 V for a 20 dB on/off ratio) are fabricated by using strain-compensated InGaAs-InAlAs multiquantum well structures. These characteristics are obtained over a wide range of applied bias voltages and wavelengths near 1.55 μm
Keywords :
III-V semiconductors; aluminium compounds; electro-optical modulation; electroabsorption; gallium arsenide; indium compounds; integrated optoelectronics; optical communication equipment; optical waveguides; semiconductor quantum wells; 1.5 V; 1.55 micron; 20 GHz; InGaAs-InAlAs; electroabsorption modulator; high efficiency modulator module; high speed operation; low chirp; multiquantum well structures; polarisation insensitivity; strain-compensated MQW;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19951369
