• DocumentCode
    797026
  • Title

    Experimental drain current drop-back in GaAs MESFETs

  • Author

    Fobelets, K. ; Borghs, G. ; Hegarty, J.

  • Author_Institution
    Dept. of Phys., Trinity Coll., Dublin, Ireland
  • Volume
    31
  • Issue
    23
  • fYear
    1995
  • fDate
    11/9/1995 12:00:00 AM
  • Firstpage
    2042
  • Lastpage
    2044
  • Abstract
    The authors demonstrate experimentally for the first time drain current drop-back at low drain voltages in GaAs MESFETs. This negative differential conductance is caused by the Gunn effect. The pronounced current drop-back is attributed to the special layer structure of the MESFET
  • Keywords
    Gunn effect; III-V semiconductors; Schottky gate field effect transistors; electric current; gallium arsenide; GaAs; Gunn effect; MESFET; drain current drop-back; low drain voltages; negative differential conductance;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19951401
  • Filename
    490628
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=797026