• DocumentCode
    797034
  • Title

    InP/InGaAs heterojunction bipolar transistor with extremely high fτ over 200 GHz

  • Author

    Oka, T. ; Tanoue, T. ; Masuda, H. ; Ouchi, K. ; Mozume, T.

  • Author_Institution
    Central Res. Lab., Hitachi Ltd., Tokyo, Japan
  • Volume
    31
  • Issue
    23
  • fYear
    1995
  • fDate
    11/9/1995 12:00:00 AM
  • Firstpage
    2044
  • Lastpage
    2045
  • Abstract
    An extremely high-speed InP/InGaAs heterojunction bipolar transistor (HBT) using a self-alignment technique is described. A cutoff frequency (fτ) of 209 GHz and a maximum oscillation frequency (fmax) of 13 GHz were achieved by using a thin base width of 30 nm and reducing parasitic capacitance and resistance through a self-alignment technique. The maximum current gain was 102 and the collector-emitter breakdown voltage (BVCEO) was 5.2 V
  • Keywords
    III-V semiconductors; electric breakdown; gallium arsenide; heterojunction bipolar transistors; indium compounds; millimetre wave bipolar transistors; 138 GHz; 209 GHz; 5.2 V; InP-InGaAs; collector-emitter breakdown voltage; cutoff frequency; heterojunction bipolar transistor; high-speed HBT; maximum oscillation frequency; parasitic capacitance reduction; parasitic resistance reduction; self-alignment technique;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19951388
  • Filename
    490629
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=797034