DocumentCode
797055
Title
Silicon direct bonding technology employing a regularly grooved surface
Author
Kim, E.D. ; Kim, N.K. ; Kim, S.C. ; Grekhov, I.V. ; Argunova, T.V. ; Kostina, L.S. ; Kudryavtseva, T.V.
Author_Institution
Korea Electrotechnol. Res. Inst., Changwon, South Korea
Volume
31
Issue
23
fYear
1995
fDate
11/9/1995 12:00:00 AM
Firstpage
2047
Lastpage
2048
Abstract
We introduce a modified-SDB technique likely to decrease the defect density by employing a groove network on the surface of a wafer to be bonded. The main goal in this method is to achieve a high structural quality not only at the bonded interface but also in the bulk by gettering the dislocations of initial contact boundaries at the free surfaces of the artificial grooves. Interfacial properties and the structural perfection of the silicon structures manufactured by the modified method are briefly reported
Keywords
dislocations; elemental semiconductors; getters; interface phenomena; silicon; wafer bonding; Si; defect density reduction; direct bonding technology; dislocations; gettering; high structural quality; interfacial properties; modified-SDB technique; regularly grooved surface;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19951373
Filename
490631
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