Title :
Breakdown and conduction phenomena in MIS structures
Author :
Lim, K.J. ; Kim, M.N. ; Chae, H.I. ; Kang, S.H. ; Bae, M.H.
Author_Institution :
Dept. of Electr. Eng., Chungbuk Nat. Univ., South Korea
fDate :
6/1/1992 12:00:00 AM
Abstract :
The breakdown and conduction characteristics in metal-insulator-semiconductor (MIS) structures having a thin silicon nitride layer (5.8 to 8.3 nm) as insulator were investigated. The nitride layer was grown on a silicon wafer by low-pressure chemical vapor deposition. The characteristics of breakdown voltage, time-dependent dielectric breakdown, and current vs. voltage of the structure were measured
Keywords :
electric breakdown of solids; elemental semiconductors; high field effects; metal-insulator-semiconductor structures; silicon; silicon compounds; I-V characteristics; MIS structures; Si-SiN; breakdown voltage; conduction characteristics; high field; low-pressure chemical vapor deposition; time-dependent dielectric breakdown; Breakdown voltage; Capacitors; Chemical vapor deposition; Current measurement; Dielectrics and electrical insulation; EPROM; Electric breakdown; Random access memory; Semiconductor films; Silicon;
Journal_Title :
Electrical Insulation, IEEE Transactions on
