A new constant-field scaling theory for MOSFET´s

The constant-field scaling theory (CONFIST) is evaluated in this work. The persistence of the drain-induced barrier lowering characteristics is selected to be an essential condition of the CONFIST. Assessment on the accuracy of various constraint equations for MOS device miniaturization is carried out and the application limitations of these equations are studied in detail. The intrinsic incompleteness of the original CONFIST is then revealed by scaling the constraint equation. It is found that the restriction of requiring an invariant Poisson equation after scaling in the original CONFIST must be released to prevent the scaling from being limited by the quasi-body effect. The original CONFIST is revised accordingly, and the modified version (CONFIST-2) shows that the application limit of the original CONFIST is about 0.5 μm and the vertical dimensions must be scaled more than the lateral ones