The effect of metallization on the ohmic contact resistivity to heavily B-doped polycrystalline diamond films

Author

Werner, Matthias ; Dorsch, Otto ; Baerwind, Hans-Ulrich ; Obermeier, Emst ; Johnston, Colin ; Chalker, Paul R. ; Romani, Simon

Author_Institution

Tech. Univ. Berlin, Germany

Volume

42

Issue

7

fYear

1995

fDate

7/1/1995 12:00:00 AM

Firstpage

1344

Lastpage

1351

Abstract

Three metallization schemes, namely Al/Si, Ti-Au and TiWN-Au contacts on B-doped polycrystalline diamond films have been compared. After annealing at 450°C in nitrogen Al/Si contacts show the lowest contact resistivity in the order of ~10^-7 Ω cm². TiWN-Au contacts were found to be the most stable contact system in view of interdiffusion and oxidation. Ti-Au contacts show a catastrophic interdiffusion at moderate annealing temperatures and strong oxidation at the very surface. High surface boron doping concentrations lead to low contact resistivities. At sufficient high doping levels current transport through the metal-diamond barrier is due to field emission

Keywords

annealing; boron; chemical interdiffusion; contact resistance; diamond; elemental semiconductors; field emission; heavily doped semiconductors; ohmic contacts; oxidation; semiconductor device metallisation; semiconductor doping; semiconductor thin films; semiconductor-metal boundaries; surface treatment; 450 C; AlSi-C:B; B doping concentrations; C:B; N; Ti-Au-C:B; TiWN-Au-C:B; annealing; current transport; field emission; heavily B-doped diamond films; interdiffusion; metal-diamond barrier; metallization; ohmic contact resistivity; oxidation; polycrystalline diamond films; stable contact system; Annealing; Boron; Conductivity; Doping; Metallization; Nitrogen; Ohmic contacts; Oxidation; Semiconductor films; Temperature;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.391217

Filename

391217