Title :
A highly robust process integration with scaled ONO interpoly dielectrics for embedded nonvolatile memory applications
Author :
Shum, Danny P. ; Tseng, Hsing-Huang ; Paulson, Wayne M. ; Chang, Ko-Min ; Tobin, Philip J.
Author_Institution :
Adv. Products Res. & Dev. Lab., Motorola Inc., Austin, TX, USA
fDate :
7/1/1995 12:00:00 AM
Abstract :
We have developed a process sequence for a flash EEPROM memory embedded in an advanced microcontroller circuit. This process simultaneously forms a thick top oxide on the interpoly ONO dielectric in the memory array and a stacked gate-oxide for the logic transistors. We have fabricated one-transistor, flash bit-cells with good data retention characteristics that incorporate a 17 nm ONO film along with high-quality stacked gate oxides
Keywords :
CMOS memory circuits; EPROM; cellular arrays; dielectric thin films; microcontrollers; 17 nm; data retention characteristics; embedded nonvolatile memory applications; flash EEPROM memory; flash bit-cells; memory array; microcontroller circuit; process integration; scaled ONO interpoly dielectrics; stacked gate-oxide; thick top oxide; Circuits; Cleaning; Dielectrics; EPROM; Logic arrays; Logic gates; Microcontrollers; Nonvolatile memory; Resists; Robustness;
Journal_Title :
Electron Devices, IEEE Transactions on
