DocumentCode :
797468
Title :
Perpendicular Anisotropy of Iron Nitride Thin Films Prepared by Ion-Assisted Vapor Deposition
Author :
Takahashi, S. ; Kishimoto, D. ; Kume, M. ; Matsuura, K. ; Kita, E. ; Tasaki, A.
Author_Institution :
Sanyo Electric Co., Ltd.
Volume :
6
Issue :
1
fYear :
1991
Firstpage :
59
Lastpage :
65
Abstract :
Iron nitride thin films with perpendicular magnetic anisotropy were prepared by ion-assisted vapor deposition. The films exhibited a large perpendicular magnetic anisotropy field (above 2.5 kOe). A columnar structure was found to grow normal to the substrate. The films consisted of paramagnetic ¿-Fe2N and ¿-Fe2-3N phases and ferromagnetic ¿-Fe and ¿´-Fe4N phases. The perpendicular anisotropy may be attributed mainly to the shape anisotropy of the perpendicularly oriented columnar structure and to the magnetic separation effect due to segregation of paramagnetic components along each column. It was also found that a large perpendicular anisotropy is obtained more easily by irradiation with a nitrogen ion beam at low angles such as 10° to 30° from the substrate, rather than at large angles such as 70°.
Keywords :
Anisotropic magnetoresistance; Chemical vapor deposition; Iron; Magnetic films; Magnetic separation; Nitrogen; Paramagnetic materials; Perpendicular magnetic anisotropy; Shape; Sputtering;
fLanguage :
English
Journal_Title :
Magnetics in Japan, IEEE Translation Journal on
Publisher :
ieee
ISSN :
0882-4959
Type :
jour
DOI :
10.1109/TJMJ.1991.4565107
Filename :
4565107
Link To Document :
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