Carbon doped GaInP/GaAs double heterostructure-emitter bipolar transistors with high current gain

Author

Yang, Y.F. ; Hsu, C.C. ; Yang, E.S.

Author_Institution

Dept. of Electr. Eng., Columbia Univ., New York, NY, USA

Volume

42

Issue

7

fYear

1995

fDate

7/1/1995 12:00:00 AM

Firstpage

1383

Lastpage

1386

Abstract

Carbon-doped GaInP/GaAs double heterostructure-emitter bipolar transistors (DHEBT´s) grown by MOCVD were fabricated. DC current gain of 430 (differential gain of 500) and an offset voltage of 25 mV were obtained. A gain up to 9 was achieved at a low collector current density of 10^-3 A/cm². By using a 600 Å set-back layer in the collector, the saturation (knee) voltage was found to be lower than 2 V at a collector current density of 1×10⁴ A/cm². A cutoff frequency of 23 GHz and a maximum oscillation frequency of 17.8 GHz were obtained

Keywords

III-V semiconductors; carbon; carrier density; chemical vapour deposition; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; semiconductor growth; 17.8 GHz; 23 GHz; 25 mV; DHEBT; GaInP:C-GaAs:C; MOCVD; collector current density; current gain; differential gain; double heterostructure-emitter bipolar transistors; knee voltage; maximum oscillation frequency; offset voltage; saturation voltage; set-back layer; Bipolar transistors; Circuits; Conducting materials; Current density; Cutoff frequency; Degradation; Electron devices; Gallium arsenide; Stress; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.391227

Filename

391227