Monolithic integrated circuits incorporating InP-based heterostructure barrier varactors

Author

David, T. ; Arscott, S. ; Munier, J.-M. ; Akalin, T. ; Mounaix, P. ; Beaudin, G. ; Lippens, D.

Author_Institution

Inst. d´´Electronique et de Microelectronique du Nord, Univ. des Sci. et Technol. de Lille, France

Volume

12

Issue

8

fYear

2002

Firstpage

281

Lastpage

283

Abstract

Fully integrated monolithic circuits incorporating InP-based heterostructure barrier varactor (HBV) frequency multipliers have been fabricated via epitaxial liftoff and transfer-substrate techniques onto a quartz substrate. We have obtained a maximum output power of 6 mW at 288 GHz: corresponding to an overall efficiency of 6%. In addition, we have observed a 45-GHz, 3-dB bandwidth centered around 300 GHz for a constant input power of 70 mW.

Keywords

III-V semiconductors; MIMIC; chemical beam epitaxial growth; frequency multipliers; indium compounds; semiconductor growth; varactors; 288 GHz; 300 GHz; 45 GHz; 6 mW; 70 mW; DC characteristics; InP; air-bridge connected devices; epitaxial liftoff; frequency capability; frequency multipliers; gas-source MBE; heterostructure barrier varactors; millimeter-wave monolithic integrated circuits; ohmic contacts; passive components; quartz substrate; transfer-substrate techniques; Bandwidth; Cutoff frequency; Diodes; Fabrication; Indium phosphide; Millimeter wave technology; Monolithic integrated circuits; Power generation; Substrates; Varactors;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2002.801935

Filename

1022826