Title :
Noise performance at cryogenic temperatures at AlGaAs/InGaAs HEMT´s with 0.15-μm T-shaped WSix gates
Author :
Joshin, Kazukiyo ; Mimino, Yutaka ; Ohmura, Souji ; Hirachi, Yasutake
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
fDate :
3/1/1992 12:00:00 AM
Abstract :
T-shaped 0.15-μm WSix gate HEMTs have been fabricated on AlGaAs/InGaAs MBE wafers. Their S-parameters, output noise spectral density Pno, and noise temperatures T e at cryogenic temperatures, were measured. The current gain cutoff frequency fT increases from 61 GHz at 295 K to 87 GHz at 90 K. Pno and Te measurements indicate that the hot-electron effect is noticeable at low temperatures at high drain current. At 30 GHz, the noise temperature is 19±3 K with an associated gain of 10.4 dB at the physical temperature of 20 K. The results demonstrate the great potential of AlGaAs/InGaAs HEMTs for low-temperature applications
Keywords :
III-V semiconductors; S-parameters; aluminium compounds; electron device noise; gallium arsenide; high electron mobility transistors; indium compounds; molecular beam epitaxial growth; solid-state microwave devices; tungsten compounds; 0.15 micron; 10.4 dB; 295 to 19 K; 30 to 87 GHz; AlGaAs-InGaAs; HEMTs; MBE wafers; S-parameters; T-shaped gates; WSix gate; cryogenic temperatures; current gain cutoff frequency; gain; hot-electron effect; low temperatures; noise performance; noise temperatures; output noise spectral density; physical temperature; semiconductors; silicides; Cryogenics; Current measurement; Cutoff frequency; Density measurement; HEMTs; Indium gallium arsenide; MODFETs; Noise measurement; Scattering parameters; Temperature measurement;
Journal_Title :
Electron Devices, IEEE Transactions on
