• DocumentCode
    797537
  • Title

    Progress in the fabrication of γ-ray detectors from high purity germanium

  • Author

    Baertsch, R.D.

  • Author_Institution
    General Electric Research and Development Center Schenectady, New York 12301
  • Volume
    18
  • Issue
    1
  • fYear
    1971
  • Firstpage
    166
  • Lastpage
    169
  • Abstract
    A planar detector with a depletion layer width of 8mm has been fabricated from high purity germanium. A total system resolution of 2.4 keV at 1.33MeV is obtained with 600 volts bias on this detector. Another detector with a 3mm thick depletion region which was operated at 2000 volts bias yielded a system resolution of 1.65 keV at 1.33 MeV. Thin window detectors have been fabricated by using a glow discharge of BF3 or PF5. This technique has also been used to form ohmic contacts on high purity germanium.
  • Keywords
    Annealing; Detectors; Electrical resistance measurement; Fabrication; Germanium; Glow discharges; Ohmic contacts; Surface discharges; Surface resistance; Voltage;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1971.4325858
  • Filename
    4325858