DocumentCode
797537
Title
Progress in the fabrication of γ-ray detectors from high purity germanium
Author
Baertsch, R.D.
Author_Institution
General Electric Research and Development Center Schenectady, New York 12301
Volume
18
Issue
1
fYear
1971
Firstpage
166
Lastpage
169
Abstract
A planar detector with a depletion layer width of 8mm has been fabricated from high purity germanium. A total system resolution of 2.4 keV at 1.33MeV is obtained with 600 volts bias on this detector. Another detector with a 3mm thick depletion region which was operated at 2000 volts bias yielded a system resolution of 1.65 keV at 1.33 MeV. Thin window detectors have been fabricated by using a glow discharge of BF3 or PF5. This technique has also been used to form ohmic contacts on high purity germanium.
Keywords
Annealing; Detectors; Electrical resistance measurement; Fabrication; Germanium; Glow discharges; Ohmic contacts; Surface discharges; Surface resistance; Voltage;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.1971.4325858
Filename
4325858
Link To Document