DocumentCode
797642
Title
Nanostructure resonances
Author
Price, Peter J.
Author_Institution
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
Volume
39
Issue
3
fYear
1992
fDate
3/1/1992 12:00:00 AM
Firstpage
520
Lastpage
522
Abstract
Coherent electron propagation is discussed for a class of nanostructures in which a `T´ arrangement of quasi-linear conductors has a closed cavity element at the bottom of the T and electrons are transmitted between the ends of the T bar. It is proposed that resonant transmission effects will occur when propagation from the upright T element into the bar is made weak, by a constriction or a gate potential. The transmission properties are investigated analytically in terms of the S matrix of the T structure, and resonance effects are found
Keywords
S-matrix theory; resonant tunnelling devices; semiconductor device models; semiconductor quantum wells; tunnelling; S matrix; T structure; closed cavity element; coherent electron propagation; nanostructure resonances; quasi-linear conductors; resonance effects; resonant transmission effects; transmission properties; Charge carrier processes; Conductors; Electron traps; Information geometry; Particle scattering; Reservoirs; Resonance; Stationary state; Tunneling; Zirconium;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.123472
Filename
123472
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