Title :
Low-frequency noise characteristics of lattice-matched (x=0.53) and strained (x>0.53) In0.52Al 0.48As/InxGa1-xAs HEMT´s
Author :
Ng, Geok Ing ; Pavlidis, Dimitris ; Tutt, Marcel ; Weiss, Rainer Matthias ; Marsh, Phil
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
fDate :
3/1/1992 12:00:00 AM
Abstract :
Extensive bias-dependent and temperature-dependent low-frequency (LF) noise measurements were performed on lattice-matched and strained In0.52Al0.48As/InxGa1-x As(0.53<x<0.70) HEMTs. The input-noise voltage spectra density is insensitive to VDS bias and shows a minimum at VGS corresponding to the peak gm condition. The corresponding output-noise voltage spectral density, which depends strongly on the gain of the devices, increases with VDS. The input noise was rather insensitive to indium (In) content. Temperature-dependent low-frequency noise measurements on these devices reveal shallow traps with energies of 0.11, 0.15, and 0.18 eV for 60%, 65%, and 70% In HEMTs. Noise transition frequencies for these devices were on the order of 200-300 MHz and remain almost the same for different channel In content and VDS bias
Keywords :
III-V semiconductors; aluminium compounds; electric noise measurement; electron device noise; gallium arsenide; high electron mobility transistors; indium compounds; 200 to 300 MHz; HEMTs; In content; In0.52Al0.48As-InxGa1-x As; LF noise characteristics; bias dependent noise; input-noise voltage spectra density; latticed matched devices; noise transition frequency; output-noise voltage spectral density; semiconductors; shallow traps; strained devices; temperature dependent noise; Energy measurement; Frequency; HEMTs; Indium; Low-frequency noise; MODFETs; Noise measurement; Performance evaluation; Temperature measurement; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
