Ring oscillators with optical and electrical readout based on hybrid GaAs MQW modulators bonded to 0.8 μm silicon VLSI circuits

Author

Krishnamoorthy, A.V. ; Woodward, T.K. ; Novotny, R.A. ; Goossen, K.W. ; Walker, J.A. ; Lentine, A.L. ; D´Asaro, L.A. ; Hui, S.P. ; Tseng, B. ; Leibenguth, R. ; Kossives, D. ; Dahringer, D. ; Chirovsky, L.M.F. ; Aplin, G.F. ; Rozier, R.G. ; Kiamilev, F.E.

Author_Institution

AT&T Bell Labs., Holmdel, NJ, USA

Volume

31

Issue

22

fYear

1995

fDate

10/26/1995 12:00:00 AM

Firstpage

1917

Lastpage

1918

Abstract

Loaded and unloaded ring-oscillator circuits with an electrical and surface-normal 850 nm optical readout are fabricated using a hybrid 0.8 μm silicon-CMOS/GaAs-AlGaAs MQW process. Measurements of the oscillation frequency of these circuits show total capacitance associated with the flip-chip-bonded optical MQW modulators as low as 52 fF

Keywords

CMOS integrated circuits; VLSI; capacitance; electro-optical modulation; flip-chip devices; gallium arsenide; integrated circuit technology; integrated optoelectronics; oscillators; semiconductor quantum wells; silicon; 0.8 micron; 52 fF; GaAs MQW optical modulators; GaAs-AlGaAs; Si; Si VLSI circuits; electrical readout; flip-chip-bonded optical modulators; hybrid CMOS/MQW process; optical readout; oscillation frequency; ring oscillator circuits; total capacitance;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19951342

Filename

490658