Title :
MOCVD-grown blue-green laser diode
Author :
Toda, A. ; Margalith, T. ; Imanishi, D. ; Yanashima, K. ; Ishibashi, A.
Author_Institution :
Res. Center, Sony Corp., Yokohama, Japan
fDate :
10/26/1995 12:00:00 AM
Abstract :
Operation of the first blue-green laser diode grown by metal organic chemical vapour deposition (MOCVD) has been demonstrated at 77 K under pulsed current injection. The observed stimulated emission is at a wavelength of 473 nm. With threshold current ranging from 90 to 180 mA (0.9-1.8 kA/cm2), and threshold voltage of ~13.0 V. The emission also shows a strong transverse electric polarisation. The laser consists of a ZnCdSe single quantum-well, ZnSe optical guiding layers, and ZnMgSSe-ZnSSe dual-stacked cladding layers grown on a (100) n-GaAs substrate
Keywords :
II-VI semiconductors; cadmium compounds; laser transitions; optical fabrication; quantum well lasers; vapour phase epitaxial growth; zinc compounds; (100) n-GaAs substrate; 13 V; 473 nm; 77 K; 90 to 180 mA; GaAs; MOCVD-grown laser diode; SQW laser; ZnCdSe single quantum-well; ZnCdSe-ZnSe-ZnMgSSe-ZnSSe-GaAs; ZnMgSSe-ZnSSe dual-stacked cladding layers; ZnSe optical guiding layers; blue-green LD; chemical vapour deposition; metal organic CVD; pulsed current injection; threshold current; threshold voltage; transverse electric polarisation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19951324
