A new method for pHEMT noise-parameter determination based on 50-Ω noise measurement system

A new method for determining the four noise parameters of pseudomorphic high electron-mobility transistors (pHEMTs) based on a 50-Ω noise measurement system without a microwave tuner is presented. The noise parameters are determined based on the noise correlation matrix technique by fitting the measured noise figure of the active device. On-wafer experimental verification up to 26 GHz is presented and a comparison with a tuner-based method is given. The scaling rules for noise parameters have also been determined. Good agreement is obtained between simulated and measured results for 2×20 μm, 2×40 μm, and 2×60 μm gatewidth (number of gate fingers × unit gatewidth) 0.25-μm double-heterojunction δ-doped pHEMTs.