Title :
A new method for pHEMT noise-parameter determination based on 50-Ω noise measurement system
Author :
Gao, Jianjun ; Law, Choi Look ; Wang, Hong ; Aditya, Sheel ; Boeck, Georg
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
Abstract :
A new method for determining the four noise parameters of pseudomorphic high electron-mobility transistors (pHEMTs) based on a 50-Ω noise measurement system without a microwave tuner is presented. The noise parameters are determined based on the noise correlation matrix technique by fitting the measured noise figure of the active device. On-wafer experimental verification up to 26 GHz is presented and a comparison with a tuner-based method is given. The scaling rules for noise parameters have also been determined. Good agreement is obtained between simulated and measured results for 2×20 μm, 2×40 μm, and 2×60 μm gatewidth (number of gate fingers × unit gatewidth) 0.25-μm double-heterojunction δ-doped pHEMTs.
Keywords :
S-parameters; electric noise measurement; high electron mobility transistors; microwave field effect transistors; microwave measurement; semiconductor device measurement; 0.25 micron; 2 to 26 GHz; 50 ohm; 50-Ω noise measurement system; S-parameters; double-heterojunction δ-doped pHEMTs; noise correlation matrix technique; noise figure; noise parameters; on-wafer experimental verification; pHEMT noise-parameter determination; pseudomorphic high electron-mobility transistors; scaling rules; Active noise reduction; Calibration; Electrical resistance measurement; Noise figure; Noise measurement; PHEMTs; Phase noise; Semiconductor device noise; Temperature; Tuners;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.2003.817680
